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A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ?? in a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole and electron traps (amphoteric) with energy levels determined at Ev+0.44 eV and Ev+0.89 eV are surmised to be Pb1 and Pb0 centers, respectively. Of these...
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