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This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect...
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