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Ge pMOSFETs with HfO2 gate dielectric and gate lengths down to 125 nm are fabricated in a Si-like process. Long-channel hole mobilities exceed the universal curve for Si by more than 2.5 times for vertical effective fields as large as 1 MV/cm. The mobility enhancement is found to be relevant at submicron gate lengths, and a drive current of 1034 muA/mum is achieved for L=125 nm at VG-VT=VD=-1.5 V...
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