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In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high- K dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and...
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