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Temperature dependence of hole mobility in Ge-rich strained SiGe-on-insulator (SGOI) pMOSFETs was investigated up to 473 K in order to examine the advantage in mobility at temperatures in operating very-large-scale-integrated circuit (VLSI) devices, which are significantly higher than room temperature. High-temperature operation and hole-mobility enhancements are demonstrated up to 473 K for the SGOI-pMOSFETs,...
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