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This paper investigates the impact of the interconnect between the bottom and the top metal layers on the transistor RF performance of CMOS and silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies. State-of-the-art 32-nm silicon-on-insulator (SOI) CMOS and 120-nm SiGe HBT technologies are analyzed in detail. Measured results indicate a significant reduction in the unity-gain...
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