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The breakdown voltage of new AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical characteristics by proton implantation. The breakdown voltage of proton-implanted AlGaN/GaN HEMTs with 150 KeV 1 times 1014 -cm-2 fluence after thermal annealing at 400 degC for 5 min under N2 ambient was 719 V, while that of conventional device was...
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