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This paper presents a comparative study of the degradation of dc characteristics and drain current collapse under dc-bias stress in passivated metal-oxide-semiconductor high-electron mobility transistor (MOSHEMT), unpassivated HEMT, and passivated HEMT devices. The Al2O3 oxide thin film that is used as a gate dielectric and a passivation layer in MOSHEMTs is prepared by a simple, low-cost, and low-temperature...
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