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Anomalous charge-pumping characteristics of 4H-silicon carbide (SiC) MOSFETs were analyzed. Charge-pumping measurements of n- and p-channel 4H-SiC MOSFETs with and without NO annealing were performed. Measurements using various pulse fall times revealed that the geometric component exists in the n-channel 4H-SiC MOSFETs and is particularly large in the unannealed n-channel 4H-SiC MOSFETs with low...
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