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In this paper, the effect of a proposed drain doping engineering on the ambipolar conduction and high-frequency performance of tunneling FETs (TFETs) is investigated using 2-D TCAD simulations. The proposed TFET structure is based on using a high-doped region above a low-doped region of the drain side. It is demonstrated that when splitting the drain into two regions, one with high doping above the...
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