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Charge-trap memory thin-film transistors (CTM-TFTs) using In–Ga–ZnO (IGZO) thin films as active channel and charge trap layers (CTLs) were fabricated and characterized. Technical strategies to optimize the device design parameters were categorized into the following three parts. At first, $P_{\textrm {O}2}$ conditions during the sputtering deposition of IGZO CTL were varied to 1%, 2%, and 5% to...
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