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The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed. Trench power nMOSFETs with 20- and 30-V breakdown voltage ratings in TO-220 packages have been fabricated and subjected to over 100 million cycles of repetitive UIS with different avalanche currents IAV at a...
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