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The bias scheme of the variable body-factor fully depleted (FD) silicon-on-insulator (SOI) MOSFET, which has been previously proposed, is reexamined. Using a new scheme, the inversion and accumulation on the substrate in the active state can be avoided, and thus, ac performance in the active state is not degraded even with extremely thin buried-oxide (BOX), owing to the depletion of the substrate...
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