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Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface...
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