The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring silicon-carbon (Si1-yCy) source and drain (S/D) regions, tantalum nitride metal gate, and hafnium-aluminum oxide high-k gate dielectric. Due to the lattice mismatch between Si0.99C0.01 S/D stressors and Si, a lateral tensile strain is induced in the transistor channel, leading to substantial electron mobility enhancement...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.