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Minimized device junction leakage current at forward-bias body and applications for low-voltage quadruple-stacked common-gate (CG) low-noise amplifier (LNA) is presented in this paper. Diode-connected MOSFETs are proposed to insert between the device bulks and forward bias, resulting in the back-to-back connected diodes and minimized junction leakage current. In addition, interstage matching networks...
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