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In this paper, we present a study on protective coating techniques for thin film X-TEM sample preparation. The study shows that proper choice of the protective layer before FIB cross section is a crucial step to maintain the film profile and make sure the accuracy of the thickness measurement. Silicon native oxide is used as the target sample. We have investigated PECS metal sputtering followed by...
In this paper, we present one simple die-level backside silicon thinning preparation approach to enable fault localization of vertical trench or highly doped silicon substrate power semiconductor devices. The methodologies are illustrated for understanding and immediate application at any lab environment. Effectiveness of the method is evaluated through qualitative judgement of image resolution clarity...
A back-side grinding CMOS-MEMS process is well established for thinning wafers down to tens of micrometres for use in stacking chips. As a result of the mechanical process, the wafer backside is compressively stressed. In this paper, authors investigate the influence of the backside induced stress in MEMS/CMOS wafers thinned down to 35∼275 μm by means of a micro-Raman technique. We found that the...
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The...
Large-tilt angle (LTA) implantation has been employed in Si manufacturing processes in many applications, such as lightly-doped drain and Halo Implant. The depth profile of implant ions usually consists of only single peak at incident angle of zero degree with respect to the perpendicular of the silicon surface. However, an abnormal dual-peak profile was observed at LTA (>40 degree) for both boron...
Si nanocrystal samples were fabricated by pulsed laser deposition method. Through changing the growth Ar gas pressure, the Si nanocrystal size and density can be controlled. Our works provided a possible way to fabricate Si nanocrystal embedded nonvolatile memory.
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