The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga2O3) and α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructure devices. We prepared α-(AlxGa1-x)2O3 alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga2O3/α-(AlxGa1-x)2O3 heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The...
Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C samples while UV transparency was high. This contradicts the literature works on the effect of Sn4+ doping in films obtained by other methods. Besides, X-ray diffraction patterns...
CdO-Ga2O3 alloy films (Cd1-xGaxO1+δ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10−3 to 10−1 ohm-cm while the...
This paper presents the origin of gallium (Ga) incorporation into AlN layers grown by metalorganic vapor phase epitaxy (MOVPE). We systematically investigated Ga incorporation from GaN deposits on the inner walls of a growth reactor and an underlying GaN layer. The Ga incorporation is not affected by the GaN deposits on the inner walls of the reactor, but is strongly affected by the underlying GaN...
Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report...
Gallium antimonide (GaSb) dots and thin-film GaSb using GaSb dots as nucleation layer were grown on a 2-inch Si(100) substrate by molecular beam epitaxy (MBE). Compared to our previous works in ultrahigh vacuum scanning tunneling microscopy (UHV-STM) system, higher-density and smaller-size GaSb dots were formed on the Si(100) substrate at 300?C. It is considered that the difference of Sb species and...
The generation behavior of damage introduced into n-GaN by CF4 plasma treatments has been electrically investigated, employing capacitance-voltage (C-V) and steady-state photo-capacitance spectroscopy (SSPC) techniques. The plasma treatments tended to decrease the effective carrier concentration |ND-NA| in the deeper-lying regions up to ∼150nm from the GaN surface, probably due to the in-diffusion...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.