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An annealed α‐(Al0.4Ga0.6)2O3 buffer layer is introduced to achieve either α‐Ga2O3 or ϵ‐Ga2O3 growth on sapphire substrates, depending on the growth temperature, using the mist chemical vapor deposition method. Transmission electron microscopy reveals that the epitaxial relationship between ϵ‐Ga2O3 and the α‐(Al0.4Ga0.6)2O3 buffer layer is ϵ‐Ga2O3 [100] || α‐(Al0.4Ga0.6)2O3 [110], and the two...
Corundum-structured α-Ga2O3 is a prospective material for power devices because it has expectable large bandgap and high breakdown field. We have shown the fabrication of α-Ga2O3 thin films on sapphire substrates, but many dislocations were confirmed in the α-Ga2O3 thin films. In this presentation, we report the growth of α-Ga2O3 thin films on α-(AlxGa1−x)2O3 buffer layers by mist CVD, for improving...
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga2O3) and α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructure devices. We prepared α-(AlxGa1-x)2O3 alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga2O3/α-(AlxGa1-x)2O3 heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The...
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