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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible...
Plasma enhanced atomic layer deposited (PEALD) films of SiNx and Al2O3 have been investigated for surface passivation of AlGaN/GaN high electron mobility transistors (HEMTs). Through DC characterization of the fabricated HEMTs with the 3 nm thick films, the SiNx passivated HEMT showed the lowest on-resistance (Ron) of 6.7 Ω · mm. Since channel resistances under the gate electrodes and Ohmic contact...
Submonolayer-grown semiconductor nanostructures are promising for high power and high speed laser devices. They are formed by a cycled deposition of the active material with a thickness well below the critical thickness for Stranski-Krastanov transition and well below one monolayer (ML), alternating with several ML thick matrix material. They were successfully implemented in high speed (>25 Gbit/s)...
This paper presents a low dark current planar-type InGaAs guard-ring PIN photodiode using an atomic layer deposited (ALD) Al2O3 passivation. The fabricated guard-ring PIN photodiode with the Al2O3 passivation shows a reduced dark current density of 1.4×10−6 A/cm2 and an increased R0·A product of 1.4×105 Ω·cm2. We found that the dark current density was reduced by 60 % simultaneously using the guard-ring...
We investigate the effects of Ga deposition rate (R) and antimony flux (P) on the morphology of GaSb quantum dots (QDs). GaSb QDs are formed on GaAs at 420 °C by Stranski-Krastanov (SK) mode under various conditions of R (0.13 ∼ 0.73 monolayer (ML)/s) and P (1.0 ∼ 4.2 × 10−7 Torr). An atomic microscope study shows that the density n of GaSb QDs is markedly affected by P and R; no (or few) QDs are...
We investigate the growth conditions for Selective Area Molecular Beam Epitaxy of GaSb on (001) GaAs inside SiO2 nano-stripes. We show that the use of an atomic hydrogen flux during the growth promote selective epitaxy at low temperature where a few micron long GaSb nanowires can be obtained both in [110] and [11̄0] orientation. Furthermore, we demonstrate that reducing the Sb/Ga flux ratio during...
We report on a cross-sectional scanning tunneling microscopy (XSTM) investigation of anti-phase boundaries on epitaxial grown GaP layers on a Si(001) substrate. The growth conditions of the GaP layer was chosen to produce a significant anti-phase disorder, to favor the XSTM experiment. A different image contrast for the main phase and the anti-phase domain within the GaP layer could be observed. The...
We have investigated the geometric and electronic structures of thin films and atomic layers of GaN on the basis of density functional theory. We found that a monolayer GaN prefers a planar structure as its stable conformation with indirect band gap of 2.28 eV. We also showed the possible structure of hydrogenated GaN that possesses a buckled structure with a direct energy gap. Hydrogen concentration...
We fabricated an epitaxial nitrogen (N) atomic sheet embedded in GaAs and performed a rapid thermal annealing (RTA) for inducing N rearrangement on the (001)-growth plane. Both the photoluminescence (PL) intensity of the N atomic sheet originated from an interaction among the fourth-nearest-neighbor N pairs and its thermal activation energy increased by the RTA. Furthermore, the delocalized electronic...
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