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Plasma enhanced atomic layer deposited (PEALD) films of SiNx and Al2O3 have been investigated for surface passivation of AlGaN/GaN high electron mobility transistors (HEMTs). Through DC characterization of the fabricated HEMTs with the 3 nm thick films, the SiNx passivated HEMT showed the lowest on-resistance (Ron) of 6.7 Ω · mm. Since channel resistances under the gate electrodes and Ohmic contact...
By applying the Arkenol process using highly concentrated sulfuric acid, various biomass feedstocks, including cedar tree, rice straw, newspaper, and bagasse, were successfully processed and converted into glucose and xylose for fermentation usage in a flash fermentation reactor in which the performance of National Renewable Energy Laboratory’s patented rec-Zymomonas mobilis 31821 (pZB5) after immobilization...
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