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Generally, LCD(liquid crystal display) driver IC(integrated circuit) requires high voltage of more than 10V and adopts MTI(middle trench isolation) scheme which is deeply trenched to get isolation characteristics on the high voltage according to chip shrinkage. The Vth(Threshold Voltage) shift of HV devices after HTOL(high temperature operating life time) becomes much more serious hazard for product...
The accuracy of ion implantation is very important in semiconductor manufacturing and will directly affect the performance of the individual devices and even the whole chip. The deviation of IMP energy, dose and angle are often encountered because of the abnormality of implant equipment or process design limit. The ion implantation energy, dose and angle information can be qualitatively and quantitatively...
Implantation is a key process in semiconductor manufacturing. However, the implantation related defects are not easily inspected by Scanning Electron Microscope, Transmission Electron Microscopy and Focused Ion Beam without chemical treatment. In this paper, implantation related defects were isolated by FA techniques and wet chemical stain technique was employed to unveil the different types of implant...
A case study on isotope antimony for buried implant is presented in this paper. The electrical test was found to correlate to the total dopant dose instead of each isotope present at the wafer. Thus the SIMS qualification has to use sum of both isotopes 121Sb and 123Sb for dopant matching.
It is reported in this paper that Idsat can be affected by fluorine implant under certain circumstance. The mechanism is believed to be that highly mobile fluorine atoms in reacting with Si vacancies or interstitials to further impact on the active dopant causing the Idsat change.
Embedded non-volatile memory (NVM) introduces additional thermal processes to a logic process flow and the impact from this extra thermal budget becomes more considerable with continued device scaling. This paper investigates the mechanism of SRAM VMIN degradation in a 40nm embedded NVM process and provides a solution to address the degradation caused. Failure analysis shows enlarged poly grain size...
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