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This paper analytically discusses the self turn-on phenomenon for SiC power MOSFET with deriving circuit formula and device characterization, and the effect of active Miller clamp circuit. The discussion is evaluated with the experiment.
In recent years, thermal problem of electronics has been serious, and accurate thermal design has been required. In conventional thermal design of power Si MOSFET, which is widely used semiconductor device for current control in a lot of area, uniform heat generation has been assumed, and designer has employed average temperature of power Si MOSFET. However, for more accurate thermal design, the non-uniform...
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