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Group IV dilute magnetic semiconductors (DMS) are candidates for the development of spin based devices due to their compatibility with the traditional semiconductor technology. Ge:Mn alloy thin films grown homoepitaxially on Ge (001) exhibit dilute ferromagnetic behavior, but growth temperatures must be kept below about 200°C to prevent second phase formation. We have grown heteroepitaxial Ge1−xMn...
Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as in flat-panel displays. Nanocrystalline-Si can be deposited over large areas at low temperatures, thus enabling three-dimensional integration with CMOS structures. Recently, nc-Si TFTs that exhibit high channel mobility and provide...
Gate stacks (rare-earth oxides, REOs-HfO2) grown on Germanium substrates using REOs (e.g. CeO2, Dy2O3, La2O3) as an interfacial buffer layer which are also friendly with Ge, demonstrating better passivation and electrical properties [1]. However, it is imperative to study a number of reliability concerns such as, accumulation of charge at the interface of the two dielectric, charge trapping, defects...
In this paper, multi-gate In0.53Ga0.47As MOSFETs were fabricated with different numbers of gate-fingers (4, 8, and 16) using air-bridge technology. The gate oxide of 8nm Al2O3 was deposited by ALD (Atomic Layer Deposition). The device was fabricated by self-aligned method with the gate deposition at first. For MOSFET with the gate length of 100nm, we achieved a maximum drain current Id of 120mA/mm,...
GaN HEMTs have demonstrated higher power density and efficiency over existing technologies such as silicon and gallium arsenide (GaAs) based RF and microwave transistors [1]. Until recently, improvements in the design of GaN semiconductor device had focused on Ga-polar GaN based HEMTs. Lately, N-polar GaN shows the advantage over Ga-polar device in making enhancement-mode (E-mode) device with low...
Recent studies on the vulnerability of integrated circuits (ICs) to high-intensity electromagnetic radiation have uncovered mechanisms through which high power microwave (HPM) excitation can cause errors in the operation of, increase power consumption by, or even damage to an IC [1–3].
Practically all methods for extraction of the lateral interface state density profile Nit(x) from charge-pumping data employ the oxide capacitance Cox [1–3] as a crucial parameter. Although Lee et al. [2] claimed that the coordinate dependence of the capacitance Cox(x) due to the fringing effect should be respected, usually Cox is treated as a constant parameter of the device [3]: Cox=εox/tox, (1),...
By utilizing the spontaneous and piezoelectric polarization inherent in wurtzite III-V nitride semiconductors, the insertion of a strained layer of InGaN, AlN or InN along the [0001] crystal orientation of GaN will result in large sheets of fixed charges. The permanent dipole resulting from these charges contribute directly to the high electric field in these layers that bends the conduction band...
Surface texturing is essential for obtaining solar cells with high efficiency. In crystalline silicon (c-Si) solar cells, low concentration alkaline solutions such as KOH and NaOH are commonly used to wet etch the surface and form random textures [1]. In the case of (100) silicon wafers, this exposes intersecting slow etching {111} planes forming a pyramidal shape. The height of the pyramids varies...
Since its fabrication in 2004 by A. Geim, K. Novoselov and colleagues at University of Manchester [1], graphene has been considered as a promising candidate material for future nanoelectronics applications. This is due to its high mobility and excellent thermal conductivity. Although graphene is a zero band gap semiconductor but by patterning it into graphene nanoribbons (GNR) (i.e. ribbons a few...
As graphene devices are increasingly developed, the metal-graphene contact has acquired an important role, because recently reported contact resistances are not good enough to maintain the intrinsic advantages of graphene in scaled devices. It is known that a metal on graphene can provide a strong doping effect associated with its work function difference and graphene's small density of states [1],...
Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al2O3 deposited at low temperature (200°C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported...
Graphene has attracted significant interest as a possible candidate for future transistors because of its high carrier mobility and current density [1]. The biggest setback of intrinsic graphene in digital applications is the absence of a bandgap, needed for digital logic to distinguish between high and low current states. Experiments demonstrated the opening of a bandgap by either applying an interlayer...
The ability to heteroepitaxially deposit high quality III-Nitride semiconductor layers on Si substrates is of great interest because of the numerous advantages offered by Si substrates: low cost, large-scale availability with high quality, good thermal and electrical conductivities as well as the possibility for integration with Si-based electronics.
Theoretical studies predict that the pattern of functional groups, or defects, will substantially affect the electrical and optical properties of low-dimensional systems such as single-walled carbon nanotubes (SWNTs) and graphene [1, 2]. Experimentally, it has been challenging to spatially control the defect generation and propagation on the graphene lattice. Recent experiments have demonstrated that...
Graphene nanoelectronics have made significant progress over the past five years particularly in material synthesis, device physics, and circuit applications. The high achievable mobilities at room temperature coupled with its high linearity (or invariant-transconductance) [1], and transit frequencies that exceed conventional solid-state transistors (see Fig. 1) make it ideally suited for GHz and...
We show that integrating waveguides in photonic crystal cavities coupled to quantum dots leads to highly efficient optical nonlinear effects at low photon numbers. Semiconductor quantum dots coupled to photonic crystal cavities provide a platform where large optical nonlinearities can be observed near the single photon level [1,2]. Coupling photonic crystal cavities to a waveguide allows for efficient...
Semiconductor quantum dots (QDs) coupled to high quality optical microcavities provide essential components for solid state cavity quantum electrodynamics systems. Indium Arsenide (InAs) QDs are one of the most promising candidates for quantum emitters due to their discrete density of states and high oscillator strength. When they are combined with small mode volume and high quality microcavities,...
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