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The chip-on-board (COB) technology offers a compact, low-cost solution to multi-chip packaging. Process-induced thermal and mechanical stresses in COB modules can affect the quality and reliability of the final product. In this paper we present an experimental and numerical study of these stresses.
This paper presents original measurements and two-dimensional simulations of high-temperature SOI MOSFET intrinsic gate capacitances. Results regarding threshold voltage extraction, impact ionization effects and subthreshold capacitance are discussed.
The performance of a chemical gas sensor based on polycristallyne tin oxide films is strongly related to their structure, thickness and doping. In previous works we have studied the influence of the thickness on the detection by impedance spectroscopy analysis [1,2]. In the present work we have focused our attention in designing and modelizing a sensor for detection of NOx for environmental applications...
Si1-xGex channel p-MOSFETs and MODFETs containing Ge fractions from x = 0 to 1.0 have been fabricated in material grown at 550??C. An improved carrier mobility was recorded for a Si0.8Ge0.2 device over that for a control MOSFET fabricated in Si also grown at this low temperature. It is argued that this growth temperature is responsible for the low absolute values of mobility recorded in these devices.
Capacitance-voltage characteristics of the Ti/W-SiO2-Si(p) structures with different oxide thicknesses have been measured at temperatures in the range from 20?? C to 550??C. Analysis of the results shows that the SiO2 relative dielectric permittivity increases with the temperature while the oxide effective charge density Qeff decreases and becomes negative at temperatures greater than 300??C.
Low frequency noise and excess currents in InP and GaAs-based double barrier(DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-assisted tunneling (TAT) is presented. It is shown that devices with low peak-to-valley current ratios (PVCRs)...
A well calibrated free-carrier absorption (FCA) technique was used to characterize the physical properties of P-I-N diode samples at different temperatures and injection levels. The measurements were compared with simulations in order to check the validity of some models and parameters which commonly appear in the simulation programs. The samples, as well as measurement temperatures (30-150??C) and...
Dielectric reliability is of critical importance in the manufacture of double polysilicon floating gate EEPROM devices. This paper reports the effect of different polysilicon oxidation and doping conditions on the properties of both the inter-poly oxide and the tunnel oxide. The paper shows that increasing the polysilicon oxidation temperature results in an improvement in inter-poly oxide breakdown...
We report for the first time an analysis of impact ionization phenomena occurring in a complementary charge injection transistor. We observed the real-space transfer of minority carriers generated by impact ionization and collected by the collector contact. From the measured collector current and by means of a simple model, we estimated the electron impact ionization coefficient of In0.53Ga0.47As...
With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-Experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility ??p...
The analysis of high frequency parameters of pseudomorphic HEMTs (PM-HEMT) at cryogenic temperatures and different gate lengths 0.1??m to 0.7??m, compared to existing modeling data, points out the improvement of average carrier velocity transport at low temperatures, the larger relative importance of certain parasitic effects (lateral diffusion under the gate, fringe effects, electrostatic capacitances)...
The charge pumping technique is demonstrated and verified to be feasible down to very low temperatures in scaled VLSI MOSFET's. It is shown that the technique can be successfully applied to evaluate the the interface damage due to radiation effects, hot carrier stress and other voltage stress in scaled MOSFET's provided the substrate doping is sufficiently high. A revised model for charge pumping...
This paper presents a new highly sensitive technique for interface characterization in VLSI MOSFET's. The technique appears to be very promising for future generations of devices as its sensitivity increases with decreasing device dimensions. Our results show that it can detect trap densities as low as a few 109 eV-1 cm-2. Moreover, this sensitivity can be further enhanced by operating at liquid nitrogen...
Thin SiO2 films nitrided by rapid thermal processing in N2O and NH3 are compared. The effect of nitrogen on growth kinetics, composition and electrical characteristics is determined.
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