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The early stages of diffusion into crystalline Si from 170 nm thick CoSi2 layers doped with As and B have been studied by a high resolution delineation technique of dopant profiles. The junction shape follows the silicide-silicon interface for B while it is deeper near the grain boundary for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer...
The noise properties of polysilicon emitter bipolar transistors are studied. The influences of the various chemical treatments and annealing temperatures, prior and after polysilicon deposition, on the noise magnitude are shown. The impact of hot-electron-induced degradation and post-stress recovery on the base and collector current fluctuations are also investigated in order to determine the main...
This communication deals with a new technique for completely characterizing the equivalent thermal circuit of a laser diode and its assembling structure. This method is able to give informations about the thermal resistances and capacitances of the various parts of the whole solid composed by the laser diode, the solder layer and copper submount. Experiments performed on BRS and DFB lasers have shown...
Two-dimensional simulations of the impact of beryllium diffusion at the junction interface of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) on the device performance are reported. It is shown that the current driving capability is greatly influenced by the redistributed profile of beryllium at the emitter-base junction due to outdiffusion. In addition, the dependence of the RF characteristics...
Electrothermal simulators are efficient tools to study ElectroStatic Discharge (ESD) problems. We use the numerical 2D simulator TMA-MEDICI [1] to simulate electrothermal problems. We propose here an analysis of thermal breakdown occurrence observed on a PIN diode under reverse ESD pulse. Experimental studies and analytical models have already been proposed [2,3,4]. Nevertheless, simulations coupled...
By means of two-dimensional device simulation the influence of the Ge fraction (x) in the base of Si/Si1-x, Gex-HBTs on the transit frequency is investigated. The calculated results are compared to experimental data.
Permeable base transistors (PBT) with metal gates and pn-junction gates have been fabricated with conventional device technology. Measurement results compared with simulations are presented. Although the structures are not optimised, cutoff frequencies of 5.3 GHz for the PBT's with pn-junctions are reached. The PBT's with Schottky gates reach 7 GHz, however, with a lower breakdown voltage. A simple...
This paper investigates isolation and wiring in a typical 700-1000-V, junction isolated (JI), high voltage integrated circuit (HVIC), process. It proposes a novel technique for running 1000-V wires over the isolation to other parts of the chip, without causing breakdown of the isolation itself or inducing unwanted parasitics.
An analytic model has been developed for nanoelectronic device analysis. Application of the model to determine the channel length limited by the short channel effect is presented. The analysis indicates for Lch ≪ 150nm an alternate source-drain junction design is required for room and low temperature operation.
BF implantation into polysilicon and its subsequent rapid thermal diffusion into single crystal silicon is investigated for the fabrication of shallow pnp polysilicon emitter bipolar transistors. The use of RTA, instead of furnace annealing, is shown to give shallower junctions, with a higher doping concentration at the polysilicon/silicon interface. The effect of fluorine, which is introduced into...
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