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In this work, the lateral InGaAs tunnel FET is configured and sized to enable gate control of the Zener (reverse bias) tunneling current. The p+InGaAs transistor channel is 4 nm thick with a n+p+ source injector and a thin 3/3 nm HfO2/Al2O3 high-k gate dielectric. Atomic-layer deposition (ALD) is used to deposit the gate dielectric.
The conduction channel of a field effect transistor (FET) can act as a plasma resonator for density oscillations in a quasi-two-dimensional electron gas. It has been proposed and demonstrated experimentally with the semiconductor transistor structures, that the hydrodynamic nonlinearities of the plasma transport can have a rectifying effect and induce a constant source-to-drain voltage in response...
The pulse-time modulated plasma etching technology, developed more than a decade ago, has been considered as one of the best solutions to the plasma-process-induced charging damage on the gate oxide of the MOSFET. In the plasma-off state, the generation of the negative ion due to a low temperature electron attachment to the neutral radical, helps in reducing the plasma-process-induced charging damage...
The authors have fabricated high-performance CF4 plasma treated poly-Si TFTs with a high-k PrTiO3 gate dielectric. The electrical characteristics such as the threshold voltage, subthreshold swing, ION/IOFF current ratio, and carrier mobility are effectively improved. In addition, the CF4 plasma treatment improves the HC and PBTI immunity due to the formation of Si-F bonds. The CF4 plasma treatment...
We report using a novel weak-oxidant plasma-enhanced atomic layer deposition (PEALD) process at 200 ??C to deposit ZnO thin films for stable, high mobility, pyroelectric thin film transistors (TFTs). Our PEALD ZnO TFTs use Al2O3 gate dielectric, also deposited by PEALD, and have field-effect mobility of 20-30 cm2/V-s. In these ZnO TFTs the mobility is found to be very weakly temperature activated...
In this paper we report on the structural and optical characterization of NCI-AlGaN active regions grown on bulk AlN substrates. 800 nm-thick NCI AlGaN films having -57% AlN by mole fraction were deposited directly on bulk AlN substrates by plasma-assisted molecular beam epitaxy. The films were characterized optically by temperature dependent cw-photoluminescence (cw-PL) and TRPL, and structurally...
Diamond is in principle the highest performance widegap semiconductor. Its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development...
In this paper, we report on the observation of the QHE in gated epitaxial graphene films on SiC (0001), along with pronounced Shubnikov-de Haas (SdH) oscillations in magnetotransport. The last QH plateau is especially pronounced, even at temperatures as high as 70 K, reaching the temperature limit of the present experimental setup.
The authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as high-temperature devices. However, CNT-TFTs will still have to endure elevated temperatures when employed in large-area and flexible electronic applications. The temperature range that...
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