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In this paper, we introduce a fully functional high voltage (Vrrm = 4.5 kV) and high current (IFM= 7 kA) p+p-n-n+ diode based on radiation enhanced diffusion (RED) technology. The RED-Diode employs a low-doped p-layer buried at ap100 mum to increase the dynamic avalanche ruggedness for high SOA capability. The diode was processed on a 100 mm wafer and can safely turn off 4 and 7 kA @ 140degC @ 1500...
This work presents a novel integration approach for silicon power devices. Considering the very widespread half-bridge interconnection of IGBTs and anti-parallel freewheeling diodes, the first prototype development and testing of a vertically integrated switch is described. This original solution is enabled by the use of surface bumps as a replacement of bond-wires and it opens up new ways for optimum...
It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical...
In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The BIGT design concept differs from that of...
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