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In this paper, the resistivity and temperature coefficient of resistance (TCR) of nanostructured Ta-Si-N thin films fabricated on silicon substrate by reactively cosputtering have been studied. The substrate bias was controlled from 0 to -200 V at a fixed nitrogen flow ratio of 5 FN2% (FN2/ (FN2+FAr) times 100%) to study the electrical properties of different Ta-Si-N films. The Ta-Si-N films with...
MOS capacitor structure with double-layer heterogeneous nanocrystals consisting of metal and semiconductor embedded in gate oxide for the applications of nonvolatile memory have been fabricated and characterized. By combining the self-assembled Ni nanocrystals and vacuum electron-beam co-evaporated Si nanocrystals in SiO2 matrix, the MOS capacitor with double-layer heterogeneous nanocrystals can appear...
A novel metal nanoparticles@mesoporous silicas with high surface area (ap 300 m2g-1), large pore size (> 5.0 nm) and high metal nanoparticles content (ap 10 wt.%) have been prepared and used as surface enhanced matrix for bacteria charectization under Raman scattering analysis. The prepared nanoparticles@mesoporous silicas present great adhesion ability to direct contact with microorganism, i.e...
To further enrich aluminum content in coal fly ash so as to reduce the cost of it as a resource for industrial aluminum extraction, a novel process was developed to separate silicon from the rest of fly ash. The process was conducted by treating the coal fly ash with high concentration sodium hydroxide solution to dissolve silicon as sodium silicate at room temperature under atmosphere. The sodium...
SiN-based micro cantilever actuators with lengths of the order of 1 mm and NdFeB/Ta thin films for actuation were designed, fabricated and characterized. Multilayered thin films of NdFeB and Ta, with total thicknesses of 13 mum and 3 mum, were deposited on 3 mum-thick SiN cantilevers by magnetron sputtering. The remnant flux density and coercive force of the thin film were as high as those obtained...
In this study, the nanocomposite Ti-Si-N thin films were prepared by reactive magnetron co-sputtering system. The Ti-Si-N film is a mixed composite consisting of the Ti-Si, Ti-N and Si-N compounds. The TiN phase is polycrystalline while SiNx is amorphous. As Si is added to the Ti-N compound to form Ti-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. nanocomposite...
A systematic study of the quality factor and resonance behavior of flexural and torsional modes of silicon nitride cantilevers vs. pressure is presented. Different anchoring, i.e., with and without undercut, is studied in the range between 3 mPa and atmospheric pressure. Thermal noise spectra of the cantilevers have been measured using a home-made optical deflection setup with an appropriately windowed...
The microstructure of Si3N4/SiC derived from the pyrolysis of UV curable polymer ceramic precursor was analyzed and characterized by TGA-DTA, XRD, FE-SEM, Electron Spectrometer, and TEM. It was found that two distinct weight loss rate peaks at 358degC and 450degC in TGA curve were identical with two DTA endothermic peaks. The total weight loss was 45wt%. The degree of crystallinity reached 91.25%...
In order to solve the pressure measurement problem in the harsh environment, such as high temperature above 200degC, a special piezoresistive pressure sensor chip has been developed. Based on the MEMS (micro electro-mechanical system) and SIMOX (separation by implantation of oxygen) technology, the piezoresistive pressure sensor chip was constituted by silicon substrate, a thin buried silicon dioxide...
This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungsten and silicon dioxide. The bonding process lasting 10 minutes is in vacuum, with temperature 400degC, pressing force 1000 N and voltage 1300 V. During the process, Si+ and O- ions react at the interface of silicon and glass wafers which create Si-O bonds and make bonding stable. After removing off...
In order to improve the performance of PECVD SiC in MEMS, pulse excimer laser annealing process was introduced in this paper. The effect was comprehensively investigated in several respects, including morphology, mechanical properties and residual stress elimination. The study revealed that: after laser annealing with adequate energy density, amorphous SiC (a-SiC) transformed into polycrystalline...
An electromagnetically excited silicon nitride beam resonant pressure sensor is described and numerical modeling is carried out on the analysis of the sensitivity of pressure measurement and temperature drift. The proposed approach is based on measurement of resonant frequencies for two resonant beams located on a diaphragm inducing different axial stress under an applied pressure, the differential...
This study focuses on phenolic-resin/carbon-fiber (PR/CF) ablation composites modified with polyhedral oligomeric silsesquioxane (POSS) and tetraethoxysilicate (TEOS). Four nanomodifiers based on diglycidyl ether of biphenol A (DGEBA), TEOS-SiO2 (T-SiO2), octamethyl-POSS (Me-POSS) and phenyl-POSS (Ph-POSS) were prepared and employed to modify the PR/CF ablation materials. To compare ablation properties...
Two kinds of nano-scale typical structures were fabricated for characterizing line edge roughness (LER) and line width roughness (LWR). With Cr and Si3N4 thin films alternately deposited on a silicon substrate and electronic beam lithography employed on a positive resist ZEP520 layer, a nano-scale multiple linewidth standard and a nano-scale grating structure were processed respectively. In regard...
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