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To reduce the thermal stresses generated in COB interconnection using NCF and flip-chip metallic bumps in conventional high-temperature processes, a surface activated bonding method is used in this study. The bonding feasibility is confirmed at 100-150degC in ambient air using Ar-RF plasma pretreatment under low vacuum. The surface conditions before and after activation are analyzed by X-ray photoelectron...
The bonding possibility of Si-Si/Au-Au/Cu-Cu wafers is confirmed at room temperature using surface activated bonding method. The surface condition and the thickness of surface contamination of Si, Au and Cu are evaluated using X-ray photoelectron spectroscopy. Various parameters, such as vacuum pressure, bonding time, bonding load, and bonding temperature, are studied in Si-Si wafer bonding. In the...
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