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Nanoelectronic devices can be, in one way, characterized by the large surface/volume ratio in addition to the central role of quantum effects. This paper describes a computationally efficient way of obtaining the band-structure of the intrinsic device including the interface with metal contacts using the extended Huckel theory (EHT). Carrier quantum transport is then computed by NEGF (non-equilibrium...
Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotube (CNT) to fabricate n-type field effect transistor (n-FET). In this paper, we study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. We find that the p-type SB height (SBH) of the Pd-CNT contact is about 0.34 eV which...
For nFET, mechanism of stress memorization technique (SMT) has been investigated. It showed, for the first time, that SMT effect on nFET improvement is not only from poly gate, but also from Si at extension area. For pFET, a novel low cost technique to improve device performance by enhanced stress proximity technique (eSPT) with Recessed SD (ReSD) has been demonstrated for the first time. pFET performance...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
Ferroelectric B3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on SrTiO3/Si, HfO2/Si and Si substrates respectively by sol-gel process. The electrical properties were studied for Metal-Ferroelectric-Semiconductor (MFS) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) capacitors. The MFIS structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization...
We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET, the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point...
A method for simulating time-dependent transport in nanoscaled devices is presented. The method is based on solving time-dependent Schrodinger equation using the method of finite difference time domain (FDTD). Poisson equation is solved self-consistently with Schrodinger equation. This method is demonstrated by simulations of time-dependent transport in a nanowire and gate-around carbon nanotube field-effect...
IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new Vdd scaling scenario. Green transistor (gFET) is based on tunneling and provides Ion and Ioff far superior to MOSFET at 0.2V if suitable low-Eg material is introduced into IC manufacturing.
A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k??p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as...
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green??s...
The influence of the dipole of an insulator surface on temporal changes in the source-drain current was investigated by using organic field-effect transistors with a surface-modified SiO2 insulator. The source-drain current decreased drastically with respect to time when the dipoles of the insulator surface displaced slightly. In order to obtain highly stable organic transistors, it is thus necessary...
To improve the bSPIFET, the SA-bSPIFET which used self-aligned process had been proposed. However there are many characteristics of bSPIFET not yet be studied. This paper focuses on the misalignment of gate shift (GS) in a 30 nm bSPIFET. Based on 2D simulation, the misalignment of GS will influence the electrical characteristics causing the degradation of the short channel behaviour and the stability...
The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100 nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer. Different configurations of gate stack are simulated and analyzed. It is shown that the structure of double-layer buffer can improve the device performance efficiently. Some important issues...
The device characteristics and manufacturability of ultra-thin oxynitride have been systemically studied in this paper for CMOS applications. We have found that the transistor with plasma oxynitride gate dielectrics gives better pFET performance in terms of drive current, mobility, threshold voltage and leakage current as compared to the one with thermal oxynitride. For nFET, the performance for transistors...
The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties, including EOT, NBTI, mobility and Ion-Ioff, were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose...
32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal and communication applications are presented.
In this paper, new technology options for boosting the performance of CMOS transistors pioneered by our group will be discussed. We focus on several new strain engineering techniques that were recently demonstrated for enhancing electron and hole mobilities in n-FET and p-FET, respectively. New applications of materials such as diamond-like carbon high-stress liner, silicon-carbon (Si:C or Si1-yCy...
We explore options for device scaling beyond the conventional scaling path. We examine the role of the parasitic capacitance for determining the performance of future one-dimensional FETs. We also explore a possible device scaling path that focuses on aggressive scaling of the contacted gate pitch, which provides performance improvements at both the device and circuit level.
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