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In this work concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and re-growth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy super-saturation after the laser process The dependence on the pulse energy and number...
The interaction between sub-melt laser annealing and an embedded Si1-xGex source/drain (S/D) module has been studied in more detail by means of a PFET transistor evaluation and blanket layer characterization. If the integration of the Si1-xGex source/drain and laser anneal modules is not optimized, defects are introduced into the Si substrate as a result of the additional thermal stress. The presence...
We report, for the first time, a detailed study of the 100 mum-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the...
In this work we present a new low-temperature poly-silicon (LTPS) TFTs fabrication process, based on excimer laser annealing, on polyimide (PI) substrate. The PI is spun on Si-wafer, used as rigid carrier, thus overcoming difficulties in handling flexible freestanding plastic substrates, eliminating the problem of plastic shrinkage with high temperature processing and allowing the use of standard...
There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boron-implanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond...
Light scattering from rough surfaces is an area of research that has received a great deal of interest from several engineering disciplines. Analytical models for reflectivity have been useful in the study of medical imaging, atomic physics, remote sensing and rapid thermal processing (RTP) of silicon semiconductor wafers. This paper presents a new variation of the surface generation method (SGM)...
In the present paper it will be shown that RTP combined with laser irradiation parallel to the wafer surface yields an optimum control of chemical reactions. The technique will be discussed and results regarding the surface preparation of silicon wafers as well as the deposition of atomically controlled layers for nanoelectronics will be presented. Examples are the removal of carbon containing residuals...
The unique characteristics of novel technological platforms, using different substrates, such as SiC, GaN, plastic, and introducing thin film processing of non-conventional materials, e.g. polymers or small organic molecules, offer the promise of widespread application in several areas, ranging from light and robust displays, to low cost photovoltaics, or to flexible radio-frequency identification...
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250degC by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related...
Spike anneals based on radiation and conduction heating are carried out on silicon wafers with 12xl2mm2 patterned areas; these areas are covered with trenches with varying dimensions, thermally isolated from each other by large unpatterned silicon areas. The width of the trenches varies from 150-4500nm; the depths are 400 and 800nm. It is found that lamp-based heating with heatrup rates varying from...
Process behavior associated with the selective oxidation of silicon (Si) vs. tungsten (W) by oxygen (O2) in hydrogen (H2) has been studied in Applied materials radiancetrade chamber. New data is obtained for SiO2 growth on Si (100) at sub-atmospheric pressure and 750-950degC, with the H2 percentage in the range of 80% to 95%. This SelOx process is a novel extension of applied materials proven low...
Microwave processing of semiconductors offers distinct advantages over conventional RTP systems in some applications. The energy contained in the microwave field can be dissipated directly into the semiconductor substrate, without the convection and conduction associated with conventional processing. In this work we describe the preliminary results of microwave annealing of heavily doped silicon layers...
The high reactivity of the free silicon surface and its consequence: the "omnipresent" native silicon oxide hinder the interface engineering in many processing steps of IC technology on the atomic level. Methods known to eliminate the native oxide need in most cases vacuum processing. They frequently deteriorate the atomic flatness of the silicon. Hydrogen passivation by a proper DHF (diluted...
We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200degC/s. We found that comparable diffusion length (~25 nm), the laser annealed samples show a Rs ~430 Omegasquare, corresponding to an active dose a factor two higher relative to lamp annealed samples...
Off stage power dissipation and profitability are posing fundamental and practical challenges to the scaling of Si CMOS to its limit. With escalating developmental cost, off state leakage current related power dominates the CMOS heat dissipation problem making the necessity of reducing the gate leakage current density to zero, so that the designer will get relief to focus on other imposing challenges...
The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have been investigated by comparing Secondary Ion Mass Spectrometry (SIMS) and simulated profiles. Samples preamorphised with Ge at different implantation energies have been prepared in order to investigate the effects of the damage position on B diffusion. The specimens have been subsequently B implanted...
For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required...
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