The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize...
A quantum well intermixing process combining ICP-RIE and SiO2 sputtering was investigated for the InGaAs/InGaAlAs multi-quantum wells. Optimal conditions including ICP-RIE etching depth, SiO2 deposition, and RTA process were obtained for a 60-nm blueshift.
Dry etching of AlSb and Al0.80Ga0.20Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl2:Ar) gas mixture without addition of BCI3. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa. Good DC/RF results, with extrinsic fT/fmax= 135/105 GHz, have been measured for a 2times50 mum HEMT with a gate...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.