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Metal-insulator-metal (MIM) capacitors are deposited at low temperatures. The dielectrics used for MIM capacitors are amorphous and always contain a certain amount of extrinsic defects. In this paper, the reliability of extrinsic defects in SiNx MIM capacitors as part of a GaAs high voltage (HV) FET process was assessed. It was shown in this paper that the number of extrinsic defects depends on the...
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