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Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors,...
This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of...
This paper investigates the impact of fringe BE junction on base majority carrier RF noise in SiGe HBTs. Due to fringe effect, the base hole noise should be modeled by correlated noise voltage source and noise current source in hybrid representation. The noise voltage source can be modeled by a weakly bias dependent noise resistance that is different from the intrinsic base resistance. The correlation...
We measured the large-signal performance of GaAs HBT and Si BJT for 1-tone, EDGE, and OFDM excitation. We optimized loading and biasing for linear efficiency. For EDGE GaAs HBT shows a slightly higher linear efficiency than Si BJT. For OFDM both technologies reach comparable performance. This makes silicon a good alternative for linear power amplifiers in mobile communication systems
The authors study the mixed-mode stress regime for bipolar transistors. From Monte Carlo simulations it was found that high-energy avalanche generated holes dominate the degradation and the energy dependence of the hot carriers on the device degradation was experimentally investigated including the pinch-in effect
Transistor mismatch is a key parameter for the design and operation of advanced analog circuits. The paper presents for the first time data from several generations of BiCMOS technology nodes for VBE and current gain (beta) mismatch. The authors show that the 0.12 mum BiCMOS has a 3-a VBE mismatch of 0.63 mV-mum and beta mismatch of 0.24 %-mum. CBE NPNs have essentially the same but slightly lower...
Different GaAs HBT ESD diode configurations are analyzed and compared using human body model (HBM) and transmission line pulse (TLP) measurements. A common diode stack test circuit consisting of 3 series forward and reverse diodes is used to analyze ESD ruggedness dependence on layout and area. Both base emitter and base collector junction ESD ruggedness is compared and analyzed. To our knowledge,...
This paper presents a novel quadrature VCO (QVCO) implemented in a 47GHz SiGe technology. The QVCO is a serially coupled LC VCO that utilizes SiGe HBTs for oscillation and MOSFETs for coupling. The SiGe BiCMOS QVCO prototype achieves about 14.6 % tuning range from 4.3 to 5 GHz. The phase noise of the QVCO is measured as -115dBc/Hz @ 2MHz offset. The 5GHz QVCO core consumes 6mA current under 3.3V power...
This work describes a novel low-density bipolar memory circuit which functions near the maximum clock rate of the technology. An InGaP/GaAs HBT implementation of a 64-bit programmable look up table memory is demonstrated. By simulation, the read function shows a 23ps delay through the memory array. Measurements of the circuit in package validates successful read operation at 5GHz
The paper presents a 0.13 mum SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives
A comprehensive investigation of reliability issues in both fully-depleted and partially-depleted SiGe HBTs-on-SOI is presented. The devices were subjected to "mixed-mode" stress at 300 K and at 77 K, and the changes in base current IB, collector resistance Rc , M-1, and AC performance were analyzed. A comparison of mixed-mode stress to conventional reverse EB bias stress is also made, and...
A 150GHz fT/fmax SiGe:C NPN heterojunction bipolar transistor was subjected to reverse reliability stress, high current forward stress and mixed-mode stress. A base current degradation comparison puts in evidence a Shockley-Read-Hall leakage mechanism for all the degradation modes, giving a unified basis for device degradation physics study. Temperature and recovery behavior, acceleration factors...
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