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As the number of RF components increases inside mobile devices, the industry has rapidly adopted and utilized MIPI's RFFE serial bus specification [1] to communicate with these devices and reduce the amount of control line routing between components. However, the use of a serial bus within the RF front end increases the risk that RF energy, particularly from the Power Amplifier (PA), can corrupt the...
This paper discusses handset power amplifier (PA) design considerations for envelope tracking applications. Tradeoffs between ET mode efficiency, gain, linearity, and RX band noise are described within the constraints of the handset environment. A quasi-F-1 710 MHz HBT PA is discussed which improves peak efficiency by 5 points. Options for the Vcc shaping function are analyzed to address the impact...
Different GaAs HBT ESD diode configurations are analyzed and compared using human body model (HBM) and transmission line pulse (TLP) measurements. A common diode stack test circuit consisting of 3 series forward and reverse diodes is used to analyze ESD ruggedness dependence on layout and area. Both base emitter and base collector junction ESD ruggedness is compared and analyzed. To our knowledge,...
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