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Self-heating is evaluated in high-voltage devices from a 0.13 mum thin-film SOI CMOS technology. Our measurement procedure is described. The influence of different parameters such as layout variations is finally investigated, and main results are shown here. A strong linear correlation between the thermal resistance and the reverse of the active surface is demonstrated. Besides, a moderate impact...
Fast power devices thermal simulation method based on averaging power losses over each cycle of PWM switching frequency is presented in this paper. For implementing a long real time dynamic thermal simulation of power devices, device power losses during transient process and static characteristics are defined as a function of device conduction current and junction temperature, and are represented...
The author first briefly reviews recent success of MOS gate power devices. The main objective is to predict, for the first time, the silicon limit characteristics of IGBTs for its on-resistance and SOA. The author also proposes ideal gate drive in order to realize the ultimate limit of high speed switching of MOS gate power devices. The results lead to new FOM, characterizing the high speed switching...
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