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The NAND flash memory occupied 40% of the total flash memory market with an annual growth rate of 70% in 2004, while NOR flash achieved only more modest growth rate of 30%. It is expected that NAND flash will surpass the market share of NOR flash in the flash market for the first time in 2005. From the viewpoint of market trend, NAND flash will be more popular in future because of more diversified...
A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection disturbance" (abbr. "hot-carrier disturbance"). The source/drain hot electrons are supplied from gate-induced drain leakage current at the GSL (ground-select line) transistor gate edge and are accelerated in the source/drain...
Recently the cell integration density of NAND flash memory increases rapidly due to its simple structure suitable for high resolution lithography. However as the cell integration density increases, NAND flash memory cell shows the problem of increased parasitic capacitance between the cells. The problems are generated by the floating-gate interference during cell operation. In order to reduce the...
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