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Reliability and performance of both NAND and NOR flash memories strongly depend on the physics of Fowler Nordheim (FN) tunneling, a mechanism widely used in writing operations. In fact, the large number of involved cells and the strong sensitivity to technological parameter variations cause wide threshold voltage distributions after FN tunneling. Overerase, erratic phenomena and tunnel oxide degradation...
The NROM nonvolatile memory device (Eitan et al., 2000) is a unique localized charge trapping based technology, which is vastly being adopted by the industry, due to its native two physical bits per cell operation. Through the insights gained from NROM device physics, substantial improvements in product performance and reliability have been attained. Window sensing has allowed not only high reliability,...
One of the most important performances of NAND flash memory is reliability characteristics, such as program/erase cycling and data retention. Tunnel oxide quality is essential to the reliability and it is well known that tunnel oxide degradation during FN (Fowler-Nordheim) stress is due to the oxide trap and interface trap generation. It is believed that trapping mainly occurs where tunnel oxide is...
Flash memories are difficult to embed in advanced CMOS generations, which is largely due to the nonscaling high program and erase (P/E) voltages; typically VPEap15V for cells operated by Fowler-Nordheim (FN) tunneling. Besides, for memories of only a few Mbytes, the need for these high voltages leads to a bad array-to-periphery area efficiency, resulting in a relatively large module size. Therefore,...
A new high cost-performance NAND Flash memory using 3-level MLC and virtual page cell architecture has been proposed. It provides 20% die size saving and 3 times fast program speed compared to conventional SLC and MLC, respectively. The proposed method can be a good choice of the market demanding both low cost and high performance as well as high reliability
A recent report reveals that in source-bias erase flash cells, light source doping can cause room temperature erratic charge loss after program/erase cycling. In this paper, we present tunnel oxide hole trapping and stress induced leakage current (SILC) measurements under source-bias erase stress conditions, in cell structures with different source doping profiles. Data suggests the deep depletion...
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