The concept of power electronic building blocks (PEBB) is increasingly adopted in naval, military, and aerospace applications, where few plug-and-play modules can be used to easily synthesize different power converter topologies. Thus, this paper presents an integrated PEBB using enhancement Gallium Nitride Field Effect Transistors (eGaN-FETs) and Nanocrystalline magnetics. The merits of the eGaN-FET are low conduction and low switching losses under high-frequency operation, while the Nanocrystalline inductor presents high saturation, and high permeability in a broad frequency range. The proposed eGaN PEBB is composed of a typical half-bridge converter built in accurately designed printed circuit board (PCB), where the components and tracks have been carefully located for its modular functioning. Additionally the PEBB includes supply-independent floating gate drivers and an input/output LC filter.