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The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the usefulness of these devices in analog and RF design. We review the basic process architectures and process building blocks for CBiCMOS. SiGe-pnp versus...
An empirical reliability model is proposed here that is able to predict parameter degradation for a SiGe Hetero-junction Bipolar Transistor (HBT) by scaling stress time laterally producing a universal curve that describes whole time evolution of degradation. The predictability of the degradation pattern is demonstrated in experiments at a forward active mode as well as the reverse Veb stress accounting...
In this paper, we investigate the emitter resistance Re in SiGe HBTs with speeds up to 280GHz, using a U-shaped polysilicon emitter. We observed that Re increased with lateral scaling, thereby degrading fT. Although a negligible component in the past, in this experiment Re * Ccb transit time delay is playing a more significant role in limiting fT. Re was modeled to explain the increase due to lateral...
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