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The correlation of the current-voltage curve for the gate (Ig-Vg) with fatal events (abrupt fall-off of threshold voltage (VT) and subsequent gate-oxide destruction) under hot carrier stress in a lateral diffused PMOS transistor with shallow trench isolation (STI) is experimentally investigated. Time to failure caused by these events becomes shortest long before Ig reaches its first peak. In this...
The performance and feasibility of rate-adaptive FEC is studied by means of an OTU framing structure. When ODTU tributary slots are utilized to transmit parity, the assignment of up to 23 slots is feasible.
This paper presents the effectiveness of high order phase noise compensation by off-line experiment which shows the scheme can reduce the pilot tone density to 25% or improve the EVM by 0.25dB for 16QAM OFDM.
An LDPC based soft-decision FEC having a NCG of 10.8dB has been implemented in a coherent ASIC. Greater gain and the interplay with nonlinearity equalizers are anticipated for the real deployment of 100G and beyond.
Recently, the demands to achieve both high-speed and high-quality imaging including high A/D resolution have increased. The new target specification is 60fps Ultra-High-Definition with 12b resolution. This imaging requires 24Gb/s, while reported CMOS image sensors have reached up to 6.5Gb/s. This paper presents a 34.8Gb/s CMOS image sensor with high image quality, which realizes 17.7M pixels at 120fps...
This paper describes a research on The Flexible Bus Systems (FBS) using Zigbee as a communication medium. The Flexible Bus System is a demand responsive transit (DRT) but it is more efficient and convenient in a sense that it entertains passenger's demands and gives bus locations in real time. The real time synchronization of The Flexible Bus System makes it information rich and unique as compared...
Electronic pre-equalization of chromatic dispersion for 43 Gb/s DQPSK has been demonstrated employing a developed test chip. The chip enables the BER in fibre with 2450 ps/nm of dispersion to be improved to 7.6E-05 without an optical dispersion compensator.
A word-line voltage generator is proposed to compensate temperature variations in the threshold voltages of flash memory cells by mixing a first current with a negative temperature coefficient with a second current with zero temperature dependency whose current is adjustable per level per operation. The measured results showed that 1) the output voltage could be adjusted from 0.15V to 2.5V with a...
A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experiments of Si and SiO2 etching, and BiCS topography simulation is performed without parameter fitting. Our new model describes the experimental topography of BiCS memory hole, including taper angles and undercuts of stacked films. The point of the modeling is that it takes into consideration...
Ultra wideband (UWB) transmission was evaluated within a small scientific spacecraft, with a view to partly replacing onboard data buses with wireless connections. Spatial distributions of UWB link throughput were derived from measurements. The results revealed that commercially-available UWB devices were capable of accommodating up to around 90-Mb/s data buses within spacecrafts.
10 Gbps DPSK electronic pre-equalization transmission was demonstrated over 500 km of 8,170 ps/nm SMF in the laboratory and over 360 km of field-installed SMF without any optical dispersion compensation.
This paper describes the impact of the introduction of a p stopper to a 30V-gate bi-directional NMOSFET and an ESD protection BJT fabricated using our 80V-class HV-MOS process. We found that the p stopper that selectively formed below the channel region of the NMOSFET not only helped to prevent the S-D punch-through but also caused some important effects: (i) alleviated the electric field crowding...
Electronic pre-equalization for 43 Gb/s DQPSK has been demonstrated for the first time. Waveform distortion caused by bandwidth narrowing to 18.1 GHz by cascaded 10 Gb/s ROADMs has been adequately pre-equalized by a SiGe-BiCMOS LSI with 6-bit, 43 GS/s digital-to-analog converters.
Ultra wideband (UWB) propagation was measured and characterized within spacecrafts, with a view to partly replacing onboard data buses with wireless connections. Spatial distributions of UWB and narrowband propagation in frequency (from 3.1 to 10.6 GHz) and time domains were measured with a microwave vector network analyzer. While narrowband resulted in a number of dead spots (deep fading points)...
This paper describes a method to enhance the load frequency control in a power system with distributed generations (DG). In this paper, a power storage system is used with photovoltaic generation and wind power generation. The microgrid system at Aichi Institute of Technology in Japan is used as a simulation model. For each simulation, which was carried out by using a power transmission simulator,...
This paper describes the flywheel storage system uses for the smoothing of power variation of photovoltaic generation. Since it is dependent taking the power generation energy as energy of the sun, the power variation of photovoltaic generation is very big. Therefore, frequency variation and voltage variation, when the photovoltaic generation linked the power system. And, there is a problem of the...
A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.
In this paper, firstly we have proposed the free charged local community network service system with ad hoc networking technology and secondly then presented the performance evaluation model of the service with multi agent systems by using the prospect theory, and finally evaluated the service system. The proposed method is expected to contribute to the application of ubiquitous network and the optimum...
An 80 V-class high voltage (HV) MOS platform integrating two types of 80 V-class novel structure devices, a high-side capable 30 V-gate-voltage drift-NMOSFET and an ESD protection BJT, is described. The 30 V-gate-voltage drift NMOSFET features a stacked source-side structure consisting of LOCOS, an extended source region, and a waved p+ stopper, enabling both off-state and on-state drain breakdown...
As applications for NAND continue to grow and cost remains a primary market driver, it is necessary to deliver increased storage capacities at smaller process lithography while meeting high performance requirements. Design plays a pivotal role by providing architectures and design solutions that minimize the impact of bitline and wordline resistance and capacitance (RC) requirements and cell-reliability...
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