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We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.
This paper discusses a thermal reliability testing experiment and failure analysis (FA) in 32nm SOI Si technology chip packages. Thermal performance of the TIM materials is monitored and physical failure analysis is performed on test vehicle packages post thermal reliability test. Thermomechanical modeling is conducted for different test conditions. TIM thermal degradation is observed at the chip...
Time- and angle-resolved photoemission spectroscopy directly enables observation of electron dynamics in condensed matter. Using EUV high harmonic probe extends the observation window in energy and momentum. Tunable mid-infrared pumping allows control of excitation mechanisms.
The OxyCAP-UK (Oxyfuel Combustion - Academic Programme for the UK) programme was a £2M collaboration involving researchers from seven UK universities, supported by E.On and the Engineering and Physical Sciences Research Council. The programme, which ran from November 2009 to July 2014, has successfully completed a broad range of activities related to development of oxyfuel power plants. This paper...
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F2 and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation...
We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble...
A thermal interface material (TIM) is typically a compliant material with high thermal conductivity that is applied between a heat-generating chip and a heat spreader in an electronic package. For a high-conductivity polymeric TIM, the adhesion strength between the TIM and its mating interfaces is typically weak, making the TIM susceptible to degradation when subjected to environmental stresses. At...
Interfacial characterization of ultra low-k film with the layer underneath is very important for reliable manufacturing of ultra low-k film. In this study, we proposed a new application of TOF-SIMS to predict the interfacial behavior of the ultra low-k with the layer underneath. Strong correlation between carbon intensity at the bottom interface with the adhesion energy of the ultra low-k with the...
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