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It is believed that drift current dominates the whole current behavior in long channel device as VGS > VT. However, when the device is kept scaling down until nano-node generation, some issues like velocity saturation and velocity overshoot occur constantly. These two issues give us a significant challenge to estimate the drain current. In the nano range of device size, we find that the I-V model...
Under the same nitridation annealing treatment, the device performance for the lower nitrogen concentration in high-k dielectric treatment seems better than that with the higher one. In this stress test combining the recovery test, the recovery efficiency and the degradation rate in lower N2 concentration is more impressive than that with higher one, too. These results demonstrate the adequate N2...
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
DRAM consumes a significant amount of energy in mobile computing devices today. Emerging non-volatile memory such as magnetoresistive memory (MRAM) offers a DRAM alternative and can potentially lead to a more energy-efficient memory system. The MRAM technology is already mature, but considering the memory industry is highly standardized, we are still unable to see any MRAM used in mainstream products...
Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si0.775Ge0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are...
The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH3) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy...
Supply chain, as an effective strategies participating in the intense business competition, has been accepted by scores of enterprises, but how to evaluate its performance properly is still an issue. Based on complex adaptive system (CAS) & emergence, this paper investigates the complex adaptive features and emergency dynamism of supply chain system and innovatively proposes a new method to assess...
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