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Recent development of ultrashort pulse technologies allows us to drive large amplitude motion of electron and ion coherently. The intense terahertz (THz) pulse resonant with the vibration frequency is promising to drive vibrations more directly and in coherent manner. In the case of semiconductors, one may coherently control the electronic system in the sub-level structures of quantum structures with...
In a In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structure, interband transitions were clearly observed in a photocurrent difference spectrum. Using an assumption that the energy dependence of electron effective mass varied smoothly toward higher energy, its nonparabolicity was explicitly determined from 0.041 m0 to 0.07 m0 in conduction quantum well.
Transimisson spectroscopy in lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) structures were measured at some low temperatures. Steplike structures accentuated by the exciton peaks of interband transitions were observed in on transmission spectra. Energy of the three light hole transition was lower than one expected with calculation. The lower energy of the three light hole...
High-power operation of 650 nm-band GaInP/AlGaInP strained quantum well visible laser diodes were successfully demonstrated by introducing a hydrogenated amorphous-Si film (/spl alpha/-Si:H) for high reflection mirror. The /spl alpha/-Si:H film has lower optical absorption coefficient than conventional hydrogen-free /spl alpha/-Si film. Therefore, heat generation at the rear facet of the laser was...
Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 ?m-long and 200 ?m wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a DC tranconductance of 280 mS/mm
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