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A number of recent efforts have attempted to design accelerators for popular machine learning algorithms, such as those involving convolutional and deep neural networks (CNNs and DNNs). These algorithms typically involve a large number of multiply-accumulate (dot-product) operations. A recent project, DaDianNao, adopts a near data processing approach, where a specialized neural functional unit performs...
Vector-matrix multiplication dominates the computation time and energy for many workloads, particularly neural network algorithms and linear transforms (e.g, the Discrete Fourier Transform). Utilizing the natural current accumulation feature of memristor crossbar, we developed the Dot-Product Engine (DPE) as a high density, high power efficiency accelerator for approximate matrix-vector multiplication...
Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO2 nanometallic memristors. The former represents nonoxide systems that might be more compatible...
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20∼50uA) and sneak current (∼1uA) level were acquired.
In order to utilize memristors in circuits, one needs high-quality predictive models that can be used for simulations to act as a design aid. Whenever possible, we base our models on the known physics of the memristors we are using. To that end, we perform a wide range of materials characterizations and electronic measurements on which to base the model. However, given the complexity of the physical...
We investigate a method to create nitrogen-vacancy (NV) centers in diamond using a focused-heliu m-ion-microscopy. Near-surface NV centers can be created with spatial resolution below 0.6μm. NV center spectral line widths at various optical and microwave frequencies were also studied.
Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible...
Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore's law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview...
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