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We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
In this paper RF small-signal modeling of SiGe HBTs was presented and its variation with biasing current, voltage and temperatures were discussed especially with the cryogenic temperatures. Direct extraction process and a two-step hot-after-cold optimization were successfully fitted with 1 to 35 GHz Y-parameters. The cryogenic RF circuit and equivalent circuit parameters were examined for its temperature...
This paper examines modeling of IC-VBE from 43 to 400 K in a 50 GHz peak fT SiGe HBT technology. Existing temperature scaling equations are shown to fail below 200 K. New temperature scaling equations are proposed, and demonstrated to work well over a wide temperature range of 43-400 K. Implications to VBE - T and DeltaVBE - T for two transistors biased at different current densities are discussed.
We investigate the pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures. A decrease of the voltage limit is observed with cooling, and attributed to the increase of intrinsic base resistance due to freezeout as well as increase of avalanche multiplication factor (M-1).
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