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We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
The several different demosaicing or color interpolation methods are available to obtain the original image captured with a CFA (Color Filter Array). Use of any of these available methods need to be supported by an effectiveness measure of the algorithms for it to be useful. This paper proposes a fuzzy based measure to establish similarity measure for Color Interpolation algorithms. This similarity...
A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using commercially-available Monte Carlo and hydrodynamic TCAD tools, one can eliminate the fundamental limitations of hydrodynamic models related to velocity overshoot and impact ionization. The method is verified in a 200-GHz SiGe technology and...
A new method for two-dimensional (2-D) regional transit time analysis in SiGe HBTs is presented, using a commercially-available TCAD suite with hydrodynamic device simulations. The quasi-static 2-D transit time analysis is first used to determine the cutoff frequency of a well-calibrated 200 GHz SiGe HBT and then applied to the design of hypothetical SiGe HBTs with peak cutoff frequencies of 375 GHz...
Continued fractions w.r.t. a specified class of numbers is considered. The invariant measures of the corresponding transformations are identified connecting the continued fractions with geodesics on the upper half plane. A problem of convergence in distribution of sums of the coefficients of the continued fraction is also considered.
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