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Recent advances in integrated photonic devices for next-generation Ethernet are described. In particular, 1.3-μm-range uncooled photonic devices (namely, electroabsorption modulator integrated lasers, directly modulated lasers, and lens integrated devices) are focused on. A key technology for uncooled operation is an InGaAlAs multiple quantum well (MQW), which produces a strong electron confinement...
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we have investigated the several key technologies. Newly developed 1.3 mum range 25 Gbps and 43 Gbps EA/DFB laser showed a good transmission performance over 10 km single mode fiber...
Direct modulation at 40 Gb/s in 1.3-μm InGaAlAs-MQW RWG DFB lasers was demonstrated. High differential gain of the InGaAlAs MQW active layer and short cavity length (100 m) of these lasers produce high bandwidth of 29 GHz and clear eye opening under 40-Gb/s operation at room temperature.
High-performance GalnNAs/GaAs triple quantum well (TQW) edge-emitting lasers were demonstrated. Al-free molecular beam epitaxy (MBE) is effective to prevent any Al impurity or contamination, which had appeared in previous GalnNAs materials, leading to a significant improvement in the photoluminescence intensity. By using this growth method, we have successfully grown highly-strained GalnNAs/GaAs TQW...
Direct modulation at 40 Gb/s of a 1.3-mum InGaAlAs distributed feedback ridge waveguide laser is experimentally demonstrated. By combination of the high differential gain of an InGaAlAs multiquantum well active layer, a short cavity length of 100 mum, and a low-resistance notch-free grating, it achieves high bandwidth of 29 GHz and high-extinction ratio of 5 dB at 40-Gb/s modulation. Moreover, the...
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