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Germanium has higher hole mobility and is a candidate for replacing silicon for pMOSFETs. This work reviews the recent progresses in understanding the negative bias temperature instability (NBTI) of Ge pMOSFETs and compares it with SiON/Si devices. Both Ge and SiON/Si devices have two groups of defects: as-grown hole traps (AHT) and generated defects (GDs). The generation process, however, is different:...
Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them. By following the As-grown-Generation (AG) model proposed by our group, we present clear evidences that the As-grown hole...
In this letter, we report positive bias-induced instability in single- and multilayer graphene field effect transistors (GFETs) with back-gate dielectric. The of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, it does not show much dependence on gate length, width, and the number...
A new type of dual-band ESPAR (Electronically Steerable Parasitic Array Radiator) array antenna is presented. The antenna consists of one feeding radiating element and two-layer parasitic radiating elements. The parasitic radiating element of each layer is composed of 6 parasitic monopoles and placed in the near field of the active radiator. Replacing the reactance-load, the on/off controlling is...
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